mmbt3906 350mw, pnp small signal transistor small signal diode ? surface device type mounting ? moisture sensitivity level 1 ? matte tin(sn) lead finish with nickel(ni) underplate ? pb free version and rohs compliant min max min max ? case : sot- 23 small outline plastic package 2.70 3.10 0.106 0.122 1.20 1.65 0.047 0.065 0.30 0.50 0.012 0.020 1.78 2.04 0.070 0.080 2.20 3.00 0.087 0.118 0.95 1.40 0.037 0.055 package packing marking sot-23 3k / 7" reel 2a sot-23 3k / 7" reel 2a maximum ratings notes:1. valid provided that electrodes are kept at ambient temperature sot-23 type number symbol ? epitaxial planar die construction ? weight : 0.008gram (approximately) maximum ratings and electrical characteristics c unit (mm) ? terminal: matte tin plated, lead free., solderable per mil-std-202, method 208 guaranteed -5 350 collector-base voltage collector-emitter voltage v cbo v ceo unit (inch) dimensions suggested pad layou t v v -40 -40 rating at 25 c ambient temperature unless otherwise specified. ordering information part no. mmbt3906 rf b power dissipation p d value 0.022 ref features mechanical data ? green compound (halogen free) with suffix "g" on packing code and prefix "g" on date code a 0.550 ref ? high temperature soldering guaranteed: 260 c/10s f d e g ? marking code : 2a junction and storage temperature range t j , t stg emitter-base voltage v ebo collector current i c thermal resistance junction-ambient r thja mmbt3906 rfg units c -200 -55 to + 150 ma mw v 357 c/w b a c d f e g 2 emitter 3 collector 1 base 2.0 0.079 0.95 0.037 0.9 0.035 0.8 0.031 version : c10
mmbt3906 350mw, pnp small signal transistor small signal diode electrical characteristics units collector-base breakdown voltage i e = 0 v i b = 0 v i c = 0 v na na i c = -0.1ma i c = -1ma i c = -10ma i c = -50ma i c = -100ma collector-emitter saturation voltage i b = -1ma i c = -50ma i b = -5ma base-emitter saturation voltage i b = -1ma v i b = -5ma v ce = -20v f= 100mhz mhz v cb = -5v i e =0 f= 1mhz vcc=-3v ic=-10ma ns i b1 =-1.0ma ns ic=-10ma ns ns tape & reel specification carrier width carrier length carrier depth sprocket hole reel outside diameter reel inner diameter feed hole width sprocke hole position punch hole position sprocke hole pitch embossment center overall tape thickness tape width reel width - - i c = -50ma v be(sat) - v ce(sat) storage time vcc=-3v t s dc current gain v ce = -1v v ce = -1v output capacitance c obo fall time i b1 =i b2 =-1.0ma t f - 12.30 0.20 collector-emitter breakdown voltage 2.00 0.05 emitter-base breakdown voltage 0.229 0.013 8.10 0.20 w collector base cut-off current h fe emitter base cut-off current v (br)cbo i ebo i cbo v (br)ceo v (br)ebo symbol - - -50 t d1 d2 e f p0 p1 - -0.65 w1 3.15 0.10 2.77 0.10 1.22 0.10 13.0 0.20 1.75 0.10 3.50 0.05 4.00 0.10 i c = -10ma i c = -10ma i c = -10ma gain-bandwidth product delay time rise time vbe=-0.5v 250 f t t d - - - - - -5 v ce = -1v 30 v eb = -6v v ce = -1v 80 v ce = -1v 60 100 60 min max -50 type number i c = -10a i c = -1ma i e = -10a v cb = -30v -40 -40 55 min t r item symbol dimension(mm) a b -3 5 - 1.50 0.10 -0.25 -0.85 35 300 -0.4 v -0.95 4.5pf 178 1 d d 225 c 75 t op co v e r t ape carieer ta p e a n y additional label ( if re q uired ) tsc label w1 d1 d2 d t c d p1 p0 a b f w e direction of feed version : c10
mmbt3906 350mw, pnp small signal transistor small signal transistor rating and characteristic curves version : c10
mmbt3906 350mw, pnp small signal transistor small signal diode rating and sharacteristic curves version : c10
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